Low‐Temperature Conductivity of a Weakly Disordered, Strongly Anisotropic Two‐Dimensional System with Electron—Electron Interaction. Application to Germanium Bicrystals and to Surface Superlattices

Abstract

AbstractIn the framework of a simple model for the electron gas in the grain boundary (inversion layer) of a semiconductor bicrystal or in a surface superlattice the quantum corrections to the conductivity tensor due to the electron—electron interaction are calculated. The results have a typical two‐dimensional form for w ≫ kBTħ/τ and show a crossing‐over to typical one‐dimensional behaviour for w ≪ kBTħ/τ. Here w⟂ is the transverse overlap integral betwween neighbouring dislocation tubes, τ the relaxation time due to scattering on the disorder. Also the weak localization corrections are calculated.