Abstract
This paper dealt with the electrical properties of Ga:ZnO film deposited via pulsed laser deposition and the mechanisms responsible for conduction and scattering behavior in terms of temperature. Such film having a degenerate band exhibited the metallic characteristics except those observed below 100 and 60K for films fabricated at 298 and 773K, respectively. This metal semiconductor transition (MST) was explained based on weakly localized electrons found in disorder conductor. It was found that the predominant scattering mechanism was ionized-impurity scattering below MST region, while lattice vibration and grain boundary scattering were important in the regime above MST temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
