Abstract
We have studied the transport and magnetic properties of Ga 1− x Mn x As/GaAs with different Mn content (0.015< x<0.071) for temperatures 40 mK–250 K and magnetic fields 0–15 T. Ferromagnetic order was observed in the samples with x>0.02. With incresing Mn concentration, the system undergoes an insulator–metal–insulator transition. Low temperature hopping conduction on the insulator side of the metal–insulator boundaries exhibits giant negative magnetoresistance.
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