Abstract
Abstract We have measured electron spin resonance, optical absorption and low-temperature conduction in amorphous Si-Ge alloy (SixGe1−x) films and studied their dependences on the Si concentration x in SixGe1−x. The density of states and the Coulomb gap have been determined from the transport analysis related to hopping conductions in the alloy films. Thermal washing out of the Coulomb gap has been observed in the alloy films. The coherence length related to the hopping and the density of states determined have been almost independent of the Si concentration x for amorphous SixGe1−x. It is expected that these parameters must be fairly intrinsic in structural disordered tetrahedral semiconductors.
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