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Abstract
Titanium nitride films were deposited from tetrakis(ethylmethylamido)titanium and ammonia at 250–350°C and 0.7–2 Torr by thermal chemical vapor deposition. The effect of process parameters such as deposition temperature, precursor temperature, carrier gas flow, and ammonia flow on the film properties was studied, the apparent activation energy of film growth was calculated and the film composition was determined. The film step coverage was better than for films grown from tetrakis(dimethylamido)titanium and ammonia.
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