Abstract
Highly perfect 3C-SiC thin films, deposited on 6H-SiC by the chemical vapor deposition at low temperature with various Cl/Si, H/Si and C/Si ratios, were characterized by X-ray high resolution triple crystal diffractometry, synchrotron white beam X-ray topography (SWBXT) and synchrotron grazing incidence topography (SGIT) methods. The films were epitaxial with a low defect density (mostly in the range of 10 7 cm −2). The best films were produced with optimum C/Si ratio in the gas phase while the poorest quality films were produced at lower H 2/Si ratio. Synchrotron topography revealed defects like cellular dislocation structure, super screw dislocations, pores, low angle grain boundaries and double positioning boundaries.
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