Abstract
Measurement of the low temperature characteristics of current gain, H FE, and cut-off frequency, ƒT, in amorphous emitter silicon heterojunction bipolar transistor is reported. The current gain, H FE,, has a positive temperature coefficient and falls with increasing base concentration, N B, at both room temperature and low temperatures. Because of the low-temperature avalanche multiplication effect in the collector-base junction, H FE, increases with increasing applied voltage, V BC, at low temperature. The cut-off frequency, ƒT, has positive temperature coefficient at low current levels and negative temperature coefficient at high current levels. It is concluded finally that the value of H FE of this device at low temperatures is adequate for most applications.
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