Abstract

AbstractEin einheitlicher, winkeltreuer dünner Film aus reinem Kupfermetall wurde bei sehr niedrigen Substrattemperaturen (100–120 °C) auf Si(100)‐Substraten durch Atomlagenabscheidung erzeugt, an der ein Ligandenaustausch beteiligt ist (siehe Schema). Gemusterte dünne Kupferfilme aus Cu‐Nanoröhren (Durchmesser 150 nm, Länge 12 μm) wurden ebenfalls hergestellt.magnified image

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