Low-temperature atmospheric-pressure chemical vapor deposition of tungsten oxide thin films

Abstract

A new low-temperature atmospheric-pressure chemical vapor deposition route to tungsten oxide thin films is reported. The films were deposited at 100–350 °C from tungsten alkoxide complexes at growth rates up to 300 Å min −1. The stoichiometry of the films was determined by Rutherford backscattering spectrometry and the O/W ratio was found to be in the 2.7–3.2 range. X-ray photoelectron spectroscopy was used to confirm that there is no carbon contamination in the films. The films were amorphous and preliminary results indicate that they show electrochromic behavior.