Low temperature anomalies and room temperature magnetism in In0.95Fe0.05Sb dilute magnetic semiconducting film

Abstract

We report the results of structural, electrical, surface morphological, and magnetic studies on the undoped and dilute Fe (0.05) doped InSb films (In0.95Fe0.05Sb) using the grazing angle X-ray diffraction technique, the quantum design physical property measurement system, atomic force microscopy (AFM), magnetic force microscopy (MFM), and the quantum design magnetic property measurement system. The In0.95Fe0.05Sb film of 500 nm thickness is grown on the silicon (Si) substrate using the thermal evaporation technique. A systematic investigation of electrical resistivity as a function of temperature and magnetic field is embarked. The electrical resistivity of the respective sample exhibits an upturn at approximately 15 K in the ferrimagnetic region. This theory explains the anomalous behavior of the electrical resistivity based on electron-electron, electron-phonon, electron-magnon, and Kondo-like spin-dependent scattering. The high-temperature data above 300 K are interpreted using the adiabatic small polaron hopping model. The AFM study shows the uniform particle size distribution, whereas the magnetic interaction at the surface is seen through MFM. The zero-field cooled magnetization measurement shows the transition at ∼65 K. The hysteresis curve at 10 K shows the ferrimagnetic behavior of the In0.95Fe0.05Sb film with coercivity and residual magnetization values of ∼100 Oe and 6.8811 emu, respectively.