Abstract
Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 350°C to 400°C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bulk and thin-film glasses were used in the bonding experiments. Bond quality was evaluated using a tensile test on structured dies. The effect of oxygen-based pre-treatments of the nitride surface on the bond quality has been evaluated. Bond strengths up to 35 N/mm 2 and yields up to 100% were obtained.
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