Abstract
High resolution Rutherford backscattering (RBS) and channeling measurements have been used to study the recrystallization of Se-implanted GaAs layers. Investigation of the solid phase growth kinetics at temperatures between 200 and 600 °C showed that the amorphous layer starts to regrow at 200 °C epitaxially from the crystalline-amorphous interface but stops, at 200 °C, after about 30% of the layer has regrown. For temperatures of 250 °C and above complete regrowth occurs. Although various amounts of disorder remain, it decreases in amount with increasing temperature. One step annealing at 600 °C for 30 minutes results in a RBS channeling quality comparable to the undamaged crystal.
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