Abstract
Low-temperature Schottky barrier (SB) metal oxide semiconductor field-effect transistors (MOSFETs) were investigated as top-level devices for monolithic three-dimensional (M3D) integration. P-channel SB silicon-on-insulator (SOI) FinFETs were fabricated with all the process steps below the typical thermal budget limit, i.e., 550 °C, for M3D top-tier fabrication. By developing a source/drain extension (SDE), a competitive driving capability and switching property were demonstrated relative to the conventional high-temperature SOI pFinFETs, with an ON-state current (ION) of 55.49 μA/μm and an ON-state to OFF-state current ratio (ION/IOFF) of 7 × 105 at VDS = −0.8 V. The effects of the SDE process and thermal budget on the device performance were investigated.
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