Low-temperature (∼270 °C) growth of vertically aligned ZnO nanorods using photoinduced metal organic vapourphase epitaxy

Abstract

We successfully produced a drastic decrease in the required growth temperatureof single-crystalline ZnO nanorods, and enabled successful growth of verticallyaligned ZnO nanorods on a Si(100) substrate using photoinduced metal organicvapour phase epitaxy (MOVPE). We introduced 325 nm light during the MOVPEgrowth, and achieved vertical growth of single-crystalline ZnO nanorodswith a hexagonal crystal structure on Si(100) at a growth temperature of270 °C. The successful low-temperature growth of ZnO nanorods on the Si(100) substratedescribed here is a promising step toward designing nanoscale photonic and electronicdevices required by future systems.