Abstract
InAs ultrahigh-density quantum-dot (UHD-QD) solar cells with type-I GaAs or type-II GaAsSb capping layers were fabricated by molecular beam epitaxy. The solar cell properties of these UHD-QD cells were measured as a function of quasi-sunlight concentration (QX) and were compared with that of the GaAs reference cell. For UHD-QD cells, the reduction of fill factor at high QX was suppressed by the low resistance of those cells, despite the wide separation width of 500 μm between comb electrodes. The open circuit voltage increased logarithmically with increasing QX, and the diode ideal factor was especially close to 1 for the type-II UHD-QD cell. These results could be mainly explained by carrier separation and lateral carrier transport through the UHD-QD layer. As a result, power conversion efficiency of UHD-QD cells increased with increasing QX and exceeded that of GaAs reference cell at over 4 suns in QX.
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