Abstract
The deposition of p + polycrystalline silicon films on SiO 2 substrates by SiH 4 /BCl 3 gases has been characterized. Films were deposited at temperatures as low as 460°C with an as-deposited resistivity of 3560 ′ 130 μΩ cm with good step coverage in oxide trenches. The extracted activation energy for silicon deposition was 0.6 eV for temperatures between 490 and 580°C and boron concentration of 2.0 ′ 0.4 X 10 2 1 /cm 3 , compared with 0.2 eV for p + silicon deposition by SiH 4 /B 2 H 6 for similar conditions. Silicon films deposited by SiH 4 /BCl 3 are polycrystalline with low resistivities as-deposited at 460°C, whereas films deposited by SiH 4 /B 2 H 6 are amorphous at deposition temperatures <520°C.
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