Abstract
Highly transparent Cu2O-doped p-type Zn1−xAlxO (AZO; Al/Zn=1.5at%) conducting oxide films were synthesized on glass substrates using a cost effective low temperature sol–gel method. X-ray diffraction of the Cu2O-doped AZO (AZO:Cu2O) films revealed a polycrystalline Cu2O (110) peak. The I–V measurements of the p–n junction (ITO/AZO:Cu2O) revealed rectifying I–V characteristics, showing that these AZO:Cu2O films exhibit p-type conductivity. p-Type conductivity was achieved by annealing the AZO:Cu2O films in N2/H2 forming gas at 400°C. The hole concentration, hole mobility and resistivity of the 0.5–2mol% AZO:Cu2O films were 5.41×1018 to 1.99×1020cm−3, 8.36–21.6cm2/Vs and 1.66×10−2 to 6.94×10−3Ωcm, respectively. These results show that post-annealing in a forming gas is effective and practicable in producing p-type AZO.
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