Abstract
We have developed a new technique utilizing a combination of hot‐wall chamber and flash evaporation for the preparation of low resistivity (10–100 Ω−1 cm−1) p‐type films. Both thin and thick films can be produced by this technique. The films are characterized by excellent stability during heating and cooling cycles and high reproducibility of resistivity values from batch to batch. Potential probe measurements indicate excellent homogeneity. An optimum hot‐wall and substrate temperature has been determined for obtaining low resistivity specimens. We have also studied electrical and optical characteristics like contact characteristics, thermoelectric power, and optical transmission. The high stability and low resistivity films obtained by this technique may have wide ranging applications in solid‐state devices.
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