Abstract
Controlling precisely the depth in glass micro-drilling by spark assisted chemical engraving (SACE) remains challenging, particularly for low depths. The possibility of using an electrically conductive material as an etch-stop layer for SACE gravity-feed drilling is investigated in this paper. Micromachining with constant DC and pulsed DC of 30–35 μm thick SiO2 deposited on low resistive silicon substrate demonstrated the etch-stop function of the conductive silicon. Measurements of etch rates and hole profiles along with scanning electron microscope imaging revealed the mechanism underlying the etch-stop process. Low resistive silicon is demonstrated to be a good etch-stop layer for SACE gravity-feed drilling. Demonstration of machining of SiO2 layer on silicon as a substrate and an etch-stop layer opens up new possibilities to adapt SACE for developing devices on silicon platform.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
