Abstract
Monocrystalline Mg-Al-O barriers for magnetic tunnel junctions (MTJs) were fabricated by natural oxidation of Mg-Al thin films. The naturally oxidized Mg-Al-O barrier had a cation-disorder MgAl2O4 structure, and Fe/Mg-Al-O/Fe(001) MTJs showed a tunnel magnetoresistance (TMR) ratio of over 180% at room temperature. In addition, the natural oxidation process resulted in tunnel barriers with a resistance area product (RA) of less than 5 Ω·μm2. We observed clear magnetization switching in a CoFe/Mg-Al-O/CoFe MTJ by spin-transfer torque. These results indicate that the natural oxidation of Mg-Al alloy is an effective method for processing cation-disorder MgAl2O4 barrier for coherent TMR with low RA.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
