Abstract

We have examined the interface morphologies CoSi2 layer after Co films deposition with and without Ti capping layer followed by RTA. In the case of Co film without Ti capping layer, the interface between CoSi2 and Si substrate exhibited significantly rough and wavy morphology. On the other hand, CoSi2 layer with Ti capping layer, showed a relatively smooth and uniform surface and interface morphologies. Therefore, the surface and interface roughness of CoSi2 layer were improved by Ti capping layer. This smooth CoSi2 layer can improve the contact resistance and the thermal stability for applications in ultra‐large‐scale integration (ULSI) devices.

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