Abstract
A low resistance Zn/Pd Ohmic contact scheme to p-InP based on solid phase reactions has been investigated. Contact resistivity in the mid-10−5 Ω cm−2 could be obtained for contacts with an atomic ratio of Zn to Pd of ∼1.5. In addition to the solid phase regrowth process, a Zn3P2/InP heterojunction is formed at the contact/semiconductor interface. The Ohmic contact formation mechanism is rationalized with the formation of Zn3P2/InP heterojunction.
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