Abstract
We propose tunnel junctions with type-II heterostructures to reduce the electrical resistance of vertical-cavity surface-emitting lasers. We fabricated the type-II tunnel junctions on GaAs substrates, which consist of highly C-doped GaAsSb on the p side and highly Si-doped InGaAs on the n side. We achieved an extremely low specific resistance of 4×10−6Ωcm2, which corresponded to a resistance of 20Ω for an aperture 5μm in diameter. The specific resistance of the type-II tunnel junction was about 40% smaller than that of the type-I tunnel junction.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
