Abstract
Polycrystalline silicon-germanium (poly-SiGe) is a promising structural material for modular cofabrication of microelectromechanical (MEM) devices with electronics, for low-cost integrated microsystems. Low-resistance electrical connections between the poly-SiGe MEMS layer(s) and integrated drive/sense electronics are required for high performance. This paper discusses approaches to achieving low contact resistance between a p+ poly-SiGe film and an underlying metal interconnect made of Al-Si(2%) and TiN capping layer. Nickel germanosilicide was used to achieve very low specific contact resistivity (less than for p+ poly-SiGe deposited at temperatures compatible with completed complementary metal oxide semiconductor electronics (⩽450°C). © 2004 The Electrochemical Society. All rights reserved.
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