Abstract
Terahertz technology has great potential for various applications in fields like biomedicine, astronomy, communications, and security inspection. Therefore, terahertz detectors that can operate at room temperature with fast response times, high sensitivity, wide detection bandwidth, and can be seamlessly integrated. To achieve this, a metal–semiconductor-metal structure with a subwavelength gap is used, which creates an electromagnetic induced potential well within the semiconductor by utilizing the antisymmetric electric field of terahertz radiation. This structure allows for the injection and retention of electrons from the metal, enhancing electrical conductivity. Experimental results have shown that reducing the spacing between the forked finger electrodes improves the detection performance of the device. At room temperature, with a bias voltage of 1 V and 0.28 THz radiation, the device achieves an equivalent noise power of 9.76 × 10−13 W/Hz/2 and a detection rate of 2.41 × 1011cm Hz1/2W−1. Additionally, the device's simple structure and large effective detection area make it suitable for producing low-resistance and large-area terahertz detectors.
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