Abstract
Room temperature formation of ohmic contacts by electroplating gold on chemically treated surfaces of p-CuInSe2 and p-CdTe single crystals is reported. The effect of Br2/methanol and KOH+KCN+H2O treatments prior to plating was analyzed in the case of CuInSe2. It is shown that the former treatment yields better ohmic contacts, with lower contact resistance, than the latter. While annealing these contacts made them highly non-ohmic, the method gives reasonably ohmic contacts on surfaces, that were purposely oxidized prior to contact preparation. In the case of p-CdTe stable, low resistance ohmic contacts were obtained at room temperature by electrochemical diffusion of Hg from solution, prior to gold plating. The treatment forms a highly degenerated p+- HgCdTe layer. The contacts, which have a very low contact to bulk resistivity ratio, were further improved by vacuum annealing.
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