Abstract
The influence of several predeposition surface treatments and different contact metals to the electrical properties of metal/p-GaN contacts was studied. A low resistance as-deposited Cr∕Au Ohmic contact was achieved, using boiling aqua regia as surface treatment. The Ohmic resistance of Cr∕Au contacts with 50μm interspacing was found to be 50Ω, while the specific contact resistivity value was measured 2.6×10−3Ωcm2. Direct comparison with the standard oxidized Ni∕Au contacts confirmed the superior characteristics of the Cr∕Au contact scheme. Violet emission was readily obtained when the as-deposited Cr∕Au contacts were used as the p electrode of a light emitting diode emitting at 385nm.
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