Abstract
Contact resistance of Al/Si Ohmic electrodes formed on boron implanted shallow p+ layers has been measured, where the annealing of ion implanted layers was performed by halogen lamp rapid heating at different temperatures ranging from 900°C to 1100°C. Contact resistance decreases gently with increasing temperature and becomes constant at above 950°C. Specific contact resistance of 1.5×10-7 Ohm-cm2 was attained at doses above 4×1015 cm-2 and at temperatures above 950°C. This value is very low and more than one order lower than that obtained by conventional furnace annealing. This contact is useful technology to fabricate high density and high speed MOS LSI.
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