Abstract
Ridge-waveguide angled-facet semiconductor laser amplifiers for the 1.5 mu m band have been fabricated with facet angles of 7 degrees and 10 degrees . Gain measurements performed with a stable, computer-controlled setup have revealed gain ripples as low as 0.025 dB at 22 dB gain for a 10 degrees device. This corresponds to a residual reflectivity of 1*10/sup -5/. Results demonstrate that the residual reflectivity of angled devices with one-layer antireflection coatings can be as low as that for normal facet devices with highly controlled double-layer antireflection coatings.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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