Abstract
By using the dual-loss modulated technology, i.e., adopting the electro-optic (EO) modulator and transmission semiconductor saturable absorber (transmission SSA) simultaneously, a diode-pumped doubly Q-switched and mode-locked (QML) Nd:Lu3Al5O12 (Nd:LuAG) laser at 1.06 μm has been realized for the first time. In comparison to the singly passively QML Nd:LuAG laser with transmission SSA, the doubly QML laser can generate more stable pulses with shorter pulse widths and higher peak powers. It can also be observed that the pulse duration of the Q-switched envelope decreases with increasing pump power. When the pump power exceeds 6.52 W for the first time, there is only one mode-locked pulse underneath a Q-switched envelope for this doubly QML Nd:LuAG laser. As a result, the subnanosecond pulse laser with 1 kHz repetition rate of EO and high stability can be generated. The shortest pulse duration generated is about 718 ps and the highest peak power reaches as high as 502 kW. The experimental results show that Nd:LuAG is an excellent alternative crystal for diode-pumped QML pulsed laser generation.
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