Abstract
Ultrafast VECSELs are compact pulsed laser sources with more flexibility in the emission wavelength compared to diode-pumped solid-state lasers. Typically, the reduction of the pulse repetition rate is a straightforward method to increase both pulse energy and peak power. However, the relatively short carrier lifetime of semiconductor gain materials of a few nanoseconds sets a lower limit to the repetition rate of passively modelocked VECSELs. This fast gain recovery combined with low pulse repetition rates leads to the buildup of multiple pulses in the cavity. Therefore, we applied an active multipass approach with which demonstrate fundamental modelocking at a repetition rate of 253 MHz with 400 mW average output power in 11.3 ps pulses.
Highlights
Vertical external cavity surface emitting lasers (VECSELs) [1] combine the advantages of diode-pumped solid-state lasers (DPSSLs), such as excellent beam quality and a high-Q cavity, with the features of semiconductor lasers such as emission wavelength engineering, compactness and low-cost fabrication
To the best of our knowledge this is the first report on an active multipass VECSEL cavity and we demonstrate the lowest pulse repetition rate obtained with a semiconductor saturable absorber mirror (SESAM) modelocked VECSEL so far
High quality multi-photon images were obtained with a SESAM modelocked VECSEL operating at 500 MHz pulse repetition rate with 287 mW average output power and a pulse duration of 1.5 ps corresponding to a peak power of 400 W
Summary
Vertical external cavity surface emitting lasers (VECSELs) [1] combine the advantages of diode-pumped solid-state lasers (DPSSLs), such as excellent beam quality and a high-Q cavity, with the features of semiconductor lasers such as emission wavelength engineering, compactness and low-cost fabrication. Low repetition rate SESAM modelocked VECSEL using an extendable active multipasscavity approach We applied an active multipass approach with which demonstrate fundamental modelocking at a repetition rate of 253 MHz with 400 mW average output power in 11.3 ps pulses.
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