Abstract
Thin film deposition processes emit large amounts of NF3 and by-product particles, which are of great concerns in the semiconductor industry, from the environmental and economic points of view. With an objective to overcome these concerns, plasmas are generated from a cylindrical reactor placed before a vacuum pump. The discharge stability is evaluated by monitoring the changes in the plasma images with the pressure. By using a particle sampler and a particle trap, the size and quantity of the by-product particles are compared during plasma-on and plasma-off. The effects of adding O2 and H2O to the by-products of the NF3 abatement process are investigated by analyzing the spectra obtained with a Fourier transform infrared spectroscopy. Further, the H2O flow rate is optimized for the highest destruction and removal efficiency of NF3. Finally, the applicability of our device to the after-treatment equipment is discussed.
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