Abstract
Sn-doped GaAs layers have been grown by low pressure MOVPE. For carrier concentrations n ≤ 1.5 × 1019 cm−3, the layers are characterised by good surface morphology, high mobility and negligible compensation. At higher carrier concentration, the surface morphology deteriorates and Sn surface accumulation is detected by AES.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
