Abstract
We report the latest results of a continuing study of low pressure-metal–organic chemical vapor deposition (LP-MOCVD) growth of InP and Ga0.47In0.53As–InP heterojunctions and superlattices, which describe the general growth of InP and GaInAs with specific application to quantum well heterostructure. A study of the sources and control of residual impurities in InP and Ga0.47In0.53As, the effects of source purity upon residual impurities, mobility, and 2 K PL intensity are detailed. Total impurity concentrations as low as 6×1014 cm−3 for InP and 3×1014 cm−3 for Ga0.47In0.53As have been obtained. Mobility as high as=μ (300)=5350, μ (77)=60 000 cm2 V−1 s−1 for InP, and μ (300)=12 000, μ (77)=60 000, μ (2)=100 000 cm2 V−1 s−1 for GaInAs layers have been measured.
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