Abstract
In this paper, we look at the benefit of using InP semiconductor technology for RF power amplifiers to improve their overall linearity and efficiency. Experimental prototype and simulation results for a PACS subscriber unit (SU) transmitter RF power amplifier are presented. The role of power amplifier nonlinearity on the emission spectral spreading and the adjacent channel interfered power ratio (ACPR) variations is demonstrated for GaAs FET, GaAs HBT, and InP HBT technologies. A technique to improve the amplifier power added efficiency (PAE) and simultaneously reduce the battery consumption current is suggested and verified by simulation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
