Abstract
We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 V(pp). For the 16QAM experiment at 112 Gbit/s, we measure a bit-error ratio of 5.1 × 10⁻⁵ and a record-low energy consumption of only 19 fJ/bit.
Highlights
Electro-optical in-phase and quadrature (IQ) modulators are key elements for spectrally efficient coherent transmission in high-speed telecommunication links [1] and optical interconnects [2]
We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption
In this paper we show that a novel class of organic cladding materials [21,22] can dramatically improve the performance and simultaneously decrease the power consumption of SOH IQ modulators
Summary
Electro-optical in-phase and quadrature (IQ) modulators are key elements for spectrally efficient coherent transmission in high-speed telecommunication links [1] and optical interconnects [2]. Operating the device with a peak-to-peak drive voltage of 5 Vpp at a symbol rate of 28 GBd, an energy consumption of 1.2 pJ/bit and bit error ratios (BER) between 1 × 10−2 and 2.4 × 10−2 have been achieved These are remarkable results, but the potential for further optimization towards lower drive voltages, reduced energy consumption and smaller footprint seems to be limited by the intrinsically rather low modulation efficiency of depletion-type phase shifters — the voltage-length product of the device [8] amounts to UπL = 24 Vmm. Drive voltages can be reduced at the expense of an increased drive current by replacing the pn-junction with a high-capacitance metal-oxidesemiconductor structure [9]. The viability of the first approach has been demonstrated for similar EO compounds [28,29] where material stability of up to 250°C has been achieved
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
