Abstract
ABSTRACTWe report the demonstration of low power phase change memory (PCM) by forming thin self-assembled SiOx nanostructures between Ge2Sb2Te5 (GST) and a TiN heater layer utilizing a block copolymer (BCP) self-assembly technology. The reset current was decreased about three-fold as fill factor, which is the occupying area fraction of self-assembled SiOx nanostructures on a TiN heater layer, increased to 75.3%. The electro-thermal simulation shows the better heat efficiency due to the nano-patterned insulating oxide.
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