Abstract
Data are presented on low-power operation in a vertical cavity transistor laser via reduced collector offset voltage by placing the emitter contact on the top of four pairs of the GaAs/AlGaAs DBR to reduce emitter resistance and subsequently depositing 11 SiO2/TiO2 DBR pairs to improve cavity quality. Consequently, the device demonstrates a reduced collector offset voltage of 1.65 V and a low-power dissipation of 6.32 mW under laser operation.
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