Low-Power-Operating 3C-SiC Ultraviolet Photodetector for␣Elevated Temperature Applications

Abstract

This work demonstrates the systematic investigation of the effects of high temperature on key performance parameters including speed, sensitivity, stability, and repeatability of a 3C-SiC/Si ultraviolet (UV) photodetector (PD) at various operating temperatures ranging from 50°C to 200°C. The device with very low dark current (∼ 0.08 pA) exhibited high sensitivity of 4466 and fast rise and decay times of 0.34 s and 0.30 s at 50°C to exposure of 254 nm UV light at a bias voltage of 20 V. Additionally, the device showed very good performance at a low operating voltage of 0.5 V and high temperature of 200°C, with a rise time of 2.68 s and decay time of 1.44 s, while maintaining good stability and repeatability. The slight decrease in performance (sensitivity from 4466 to 932) at 200°C was attributed to the increase in lattice scattering at elevated temperatures, leading to a decrease in carrier mobility. Moreover, the device was fabricated using a very cost-effective process flow. Consequently, this study can contribute to the development of low-power, fast, highly sensitive, and cost-effective 3C-SiC UVPDs for use in high-temperature photonic applications.