Abstract
Memristors characterized by non-volatile memory resistance switching are promising candidates for building brain inspired computing architectures. However, existing memristive devices are still far from the energy efficiency of petaflops per joule exhibited by biological neural networks. Therefore, to achieve the goal of ultra-low power operation, it is necessary to develop new materials for the active layer in memristors. Here, we show highly energy efficient memristive devices built from liquid-exfoliated 2D WS2 and MoS2 nanosheets, enriched in monolayers using a cascade centrifugation method. Lateral devices with electrochemically inert electrodes were built using the drop casting method. The devices show non-volatile resistive switching with a remarkable low energy consumption. This work contributes to the realization of energy efficient and high performance neuromorphic computing applications.
Highlights
The data deluge in the digital age and reaching the limits of existing technologies call for the development of new materials and devices for generation memory and computing technologies
It was believed that non-volatile switching is not scalable to sub-nanometer size owing to leakage currents, but Ge et al.9 demonstrated this effect in monolayer atomic sheets
Memristors are non-volatile memory devices based on resistive switching (RS) effects, with a simple two-terminal structure, three dimensional stacking capability, high flexibility, ease of fabrication, and low cost
Summary
The data deluge in the digital age and reaching the limits of existing technologies call for the development of new materials and devices for generation memory and computing technologies. Memristive devices, based on emerging two-dimensional (2D) semiconducting materials, are potential candidates for brain inspired computing applications due to their unique properties.1–8 Until recently, it was believed that non-volatile switching is not scalable to sub-nanometer size owing to leakage currents, but Ge et al.9 demonstrated this effect in monolayer atomic sheets.
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