Abstract
This study presents the design and analysis of the inductively source degenerated low noise amplifier for the ultra-wideband application. This technique uses the linearization and the current MOSFET model for calculation of noise figure for the LNA. The impedance, two port network correlation matrix for the parasitic noise component and noise figure is also presented.
Highlights
One of the most promising research interests is based on the radio receiver
Considering the parasitic and digital substrate noise the ܩ௧ and the Rn for the circuit given in Fig. 2b may be written as:
When the parasitic and the substrate noise (digital substrate noise is modeled by a series resistance and an equivalent voltage source in parallel with the circuit as in Jung-Suk (2001) has been taken in to account the Rn becomes:
Summary
One of the most promising research interests is based on the radio receiver. The gain, noise figure, nonlinearity and impedance matching are the most important parameter of the LNA design. The large signal must be accommodated by the low noise amplifier without distortion and present a specific impedance of 50Ω to the input source.
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