Abstract
Abstract : We have grown high quality Ge quantum dots on Si selective epitaxial growth (SEG) facets as well as tilted Si substrates We have also controlled the formation of the SEG mesas to achieve one-dimensional ridges on stripe Si patterns in attempt to form an ordered dot array. At 8K the photoluminescence spectrum shows the contribution from Ge wetting layers and Ge quantum dots Studies on the control of Ge dot positioning have been conducted. Several different configurations of the positioning have also been observed with the variation of the Ge thickness deposited. The intersubband absorption in self-assembled boron-doped and modulation-doped multiple Ge quantum dots was studied. An absorption peak in the midinfrared range is observed at room temperature by Fourier transform infrared spectroscopy which is attributed to the transitions between the first two heavy-hole states of the Ge quantum dots Si-based photodetectors operating at 1.3-1.55 microns for the purpose of fiber communications were studied. I-V measurement shows a low dark current density of 3x10(-5) A/cm at 1 V. A strong response at 1.3-1.5 was observed. Highest efficiency of 8% was observed at a bias of -2.5 V.
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