Low-power memristors based on layered 2D SnSe/graphene materials

Abstract

The emerging two-terminal memristor with a conductance-adjustable function under external stimulation is considered a strong candidate for use in artificial memory and electronic synapses. However, the stability, uniformity, and power consumption of memristors are still challenging in neuromorphic computing. Here an Au/SnSe/graphene/SiO2/Si memristor was fabricated, incorporating two-dimensional graphene with high thermal conductivity. The device not only exhibits excellent electrical characteristics (e.g., high stability, good uniformity and a high ROFF/RON ratio), but also can implement biological synaptic functions such as paired-pulse facilitation, short-term plasticity and long-term plasticity. Its set and reset power values can be as low as 16.7 and 2.3 nW, respectively. Meanwhile, the resistance switching mechanism for the device, which might be associated with the formation and rupture of a filamentary conducting path consisting of Sn vacancies, was confirmed by high-resolution transmission electron microscopy observations. The proposed device is an excellent candidate for use in high-density storage and low-power neuromorphic computing applications.