Abstract
One of the important components of a receiver is the low noise amplifier (LNA). The challenges of LNA design include ability to achieve high gain, low noise figure and better linearity at low power consumption within the required frequency. In this paper, our design is based on Impulse Response (IR) Ultra-Wideband (UWB) transceiver operating at 3.1 - 4.6㎓. Hence the LNA designed has been optimized for Low noise figure, considerably high gain and better linearity at low power consumption, which make it suitable for implant-able radio application. The process technology used here is 0.25㎛ CMOS Silanna process.
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