Abstract
Abstract: The capacity, functionality, dependability, and durability of the memory sense circuits in the basic cell are all significantly impacted by sense amplifiers in the proposed experiment. We will create two novel circuits that have been suggested in this presentation. This project's suggested circuit is a PMOS biassed sense amplifier with a basic cell that has a high output impedance and reduces the circuit's sensing latency as well as its power dissipation. As a result, the developed circuit executes operations similarly to those of parallel circuits, reducing the sense latency and circuit power consumption. The performance of one of the recommended sense amplifiers may then be verified by simulation utilizing Tanner EDA and CTSA and 180nm technology, leading to a sense decoder employing advanced technology in the technique.
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