Abstract
This paper presents a novel low-power gate driver circuit fabricated from glass by using hydrogenated amorphous silicon (a-Si:H) technology and a standard five-mask process. The tolerance of the threshold voltage shift of the proposed gate driver circuit can be estimated as 30 V by using an H-SPICE simulator. Measurement results indicate that the rising and falling times of the output waveform are equal to those in the initial state. Moreover, the proposed gate driver circuit can operate reliably at a high temperature ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</i> = 120 °C) for over 360 h. Furthermore, the proposed gate driver circuit reduces power consumption by 77.3% over that of a conventional gate driver circuit.
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