Abstract

AbstractThis paper introduces a highly efficient and low-power inverse class-F voltage doubler (VD) designed for radio frequency (RF) energy harvesting systems. Specifically tailored for mid-band 5G technology, the VD is designed for operation within the 1240–1300 MHz satellite band. The innovative design employs an inverse class-F architecture, incorporating a $$\lambda /8$$ λ / 8 short-ended transmission line (TL) connected to the diode anode and a ($$\lambda /12$$ λ / 12 ) open-ended transmission line linked to the input of the voltage doubler. This configuration aims to reshape voltage and current waveforms, effectively reducing losses and series resistance in the diode. Dual-coupled transmission lines (CTLs) are utilized to provide passive voltage boosting at low-input power levels. The suggested voltage doubler is implemented using RO4003C substrate material with a dielectric relative permittivity ($${\upvarepsilon }_{r}$$ ε r ) of 3.38 and a thickness of 0.81 mm. Measured results demonstrate a minimum input return loss of − 29.3 dB at 1.25 GHz, operating seamlessly within a frequency band from 1.18 to 1.32 GHz. The measured conversion efficiency is 45.2% at an input power (Pin) of − 4dBm. Furthermore, the peak RF–DC efficiency reaches 50% at an input power of 0dBm. Simulated results predict a remarkable conversion efficiency of 60% and 68.7% at − 4dBm and 0 dBm, respectively. In addition to its exceptional performance, the suggested voltage doubler exhibits an experimental DC output voltage of 0.53 V at $$P_{{{\text{in}}}} = - 10{\text{dBm}}$$ P in = - 10 dBm and a saturated DC voltage of 3.4 V at an input power of 10dBm under a load terminal resistance of 8 KΩ. Finally, the dimensions of the proposed voltage doubler are $$25.3 \times 10.5 {\text{mm}}^{{2}}$$ 25.3 × 10.5 mm 2 .

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