Abstract
An inverted ridge 3D thermal optical (TO) switch of a graphene-coated polymer/silica hybrid waveguide is proposed. The side electrode structure is designed to reduce the mode loss induced by the graphene film and by heating the electrode. The graphene layer is designed to be located on the waveguide to assist in the conduction of heat produced by the electrode. The inverted ridge core is fabricated by etching and spin-coating processes, which can realize the flat surface waveguide. This core improves the transfer of the graphene layer and the compatibility of the fabrication processes. Because of the opposite thermal optical coefficient of polymer and silica and the high thermal conductivity of the graphene layer, the 3D hybrid TO switch with low power consumption and fast response time is obtained. Compared with the traditional TO switch without graphene film, the power consumption of the proposed TO switch is reduced by 41.43% at the wavelength of 1550 nm, width of the core layer (a) of 3 μm, and electrode distance (d) of 4 μm. The rise and fall times of the proposed TO switch are simulated to be 64.5 μs and 175 μs with a d of 4 μm, and a of 2 μm, respectively.
Highlights
Three-dimensional (3D) hybrid integrated chips have the advantages of a high integration degree of photonic chips, improvement and diversification in device function, and low signal crosstalk; these chips can be applied to optoelectronic integration fields and 3D integration fields [1,2]
A variety of optical devices such as vertical amplifiers [3,4], optical waveguides [5,6], optical switches [7,8], lasers [9,10], and optical detectors [11,12] can be integrated on a single chip according to their respective functions
To further reduce the power consumption of the vertical optical devices, the polymer/silica hybrid Mach Zehnder interferometer (MZI) thermal optical (TO) switches with a graphene film have attracted attention
Summary
Three-dimensional (3D) hybrid integrated chips have the advantages of a high integration degree of photonic chips, improvement and diversification in device function, and low signal crosstalk; these chips can be applied to optoelectronic integration fields and 3D integration fields [1,2]. A key goal of 3D hybrid integrated optical devices is to realize the optical path switching between different layers. In 2018, Qian Qian Song fabricated an X-junction thermo-optic with a silicon oxynitride (SiON) core and polymer cladding, realizing a power consumption of 59.6 mW and rise and fall times of 1.42 ms and 0.85 ms, respectively [18].
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