Abstract

Bluetooth Low Energy is advanced technology which was marketed by Bluetooth SIG for distinctive applications at 2.4-2.5 frequency range. This paper presents a low input reflection coefficient (S 11 < -15 dB) and low power LNA using cascode stage with inductively degenerated technique in 45nm CMOS process technology. The LNA is optimized for working in Bluetooth Low Energy application i.e., 2.4GHz frequency range. Implementation of the circuit design was done in Advanced Design System (ADS) software. Cascode with inductively degenerated topology provides high gain, nominal noise figure, high linearity and low power consumption features. The low noise amplifier achieves low input reflection coefficient (S11) of -25.045 dB, maximum gain of matching circuit i.e., 21.154 dB, reverse transmission coefficient (S12) of -24.130 dB with nominal noise figure (NF) of 3.695dB at 2.4GHz frequency. The LNA achieves low power consumption 0.017mW from a 1V power supply.

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