Abstract
AbstractThis article describes a monolithic receiver front‐end comprising a low‐noise amplifier, a dual‐gate mixer, and an intermediate‐frequency (IF) amplifier implemented in a standard 0.18 μm CMOS technology. Over the frequency band of interest, flat and high conversion‐gain (CG) and flat and low noise‐figure (NF) are achieved simultaneously by adopting slightly under‐damped Q‐factors for the second‐order CG and NF frequency responses. To suppress the high‐frequency noise and to enhance the RF–IF and LO–IF isolation, RC low‐pass filters (i.e., IF filters) are added at output of the dual‐gate mixer and the cascode IF amplifier. The receiver front‐end dissipates 16.4 mW and exhibits an NF of 6.86 dB and a CG of 22.26 dB at 24 GHz. In addition, excellent isolation is also achieved. The measured LO–IF, RF–IF, and LO–RF isolation is −31.31, −49.36, and −58.93 dB, respectively, at 24 GHz. The chip area is only 1.21 × 0.7 mm2, that is, 0.847 mm2, excluding the test pads. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1471–1476, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26835
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